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SUD50N06-09L
Vishay Siliconix
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
I D (A) a
FEATURES
? 175 °C Junction Temperature
? TrenchFET ? Power MOSFET
60
0.0093 at V GS = 10 V
0.0122 at V GS = 4.5 V
50
50
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-252
Drain Connected to Tab
G
D
G
D
S
Top View
Ordering Information:
SUD50N06-09L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Gate-Source Voltage
Symbol
V GS
Limit
± 20
Unit
V
Continuous Drain Current (T J = 175 °C) b
T C = 25 °C
T C = 100 °C
I D
50
50 a
Pulsed Drain Current
I DM
100
A
Continuous Source Current (Diode Conduction)
I S
50
a
Avalanche Current
I AS
50
Single Avalanche Energy (Duty Cycle ? 1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T A = 25 °C
E AS
P D
T J , T stg
125
136
3 b , 8.3 b, c
- 55 to 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ? 10 sec
Steady State
R thJA
R thJC
15
40
0.85
18
50
1.1
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t ? 10 s.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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